IGBT功率模塊(kuai)(kuai)是指采用IC驅(qu)動，利(li)用最新的(de)(de)封裝技術將IGBT與驅(qu)動電(dian)路、控制電(dian)路和保護電(dian)路高度集(ji)成在一(yi)起的(de)(de)模塊(kuai)(kuai)。其類別從復合功率模塊(kuai)(kuai)PIM發展到智能功率模塊(kuai)(kuai)IPM、電(dian)力電(dian)子積木PEBB、電(dian)力模塊(kuai)(kuai)IPEM。
IGBT功(gong)率模(mo)塊(kuai)的驅(qu)(qu)動電(dian)(dian)(dian)(dian)(dian)(dian)路元件較少，在(zai)短路故障時只要結溫(wen)不(bu)超過(guo)安全工(gong)作(zuo)范圍，驅(qu)(qu)動電(dian)(dian)(dian)(dian)(dian)(dian)路仍可以繼續安全工(gong)作(zuo)。IGBT在(zai)大電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)時具(ju)有退飽和特性，可以在(zai)一定(ding)程度上(shang)保護器件過(guo)流(liu)(liu)，其它的電(dian)(dian)(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)(dian)(dian)子開關(guan)器件則(ze)都不(bu)具(ju)備這種(zhong)特性。總之(zhi)，IGBT功(gong)率模(mo)塊(kuai)具(ju)有驅(qu)(qu)動簡單、過(guo)壓(ya)過(guo)流(liu)(liu)保護實現(xian)容易、開關(guan)頻率高(gao)以及(ji)不(bu)需要緩沖電(dian)(dian)(dian)(dian)(dian)(dian)路等特性，非(fei)常適合應用在(zai)中壓(ya)驅(qu)(qu)動領域(yu)。常見的IGBT功(gong)率模(mo)塊(kuai)的額定(ding)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)等級有600V、1200V、1700V、2500V、3300V和4500V，額定(ding)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)則(ze)可以達到2400A。雖然有更高(gao)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)等級的IGBT器件，但其電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)等級卻(que)大為(wei)(wei)下降。例如，額定(ding)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)為(wei)(wei)6500V的IGBT器件的額定(ding)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)僅(jin)為(wei)(wei)650A。額定(ding)功(gong)率最大的IGBT電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)參數為(wei)(wei)3600V/1700A和4500V/1200A。
各中(zhong)(zhong)類別型號(hao)的(de)(de)(de)IGBT功(gong)率(lv)模(mo)(mo)塊(kuai)(kuai)已經運(yun)用到各中(zhong)(zhong)電子元件(jian)中(zhong)(zhong)，IPM除用于變(bian)頻調速(su)外，600A/2000V的(de)(de)(de)IPM已用于電力機(ji)車VVVF逆變(bian)器。平面低(di)電感(gan)封裝(zhuang)(zhuang)技術(shu)是大(da)電流(liu)IGBT模(mo)(mo)塊(kuai)(kuai)為(wei)有源(yuan)器件(jian)的(de)(de)(de)PEBB，用于艦(jian)艇上的(de)(de)(de)導(dao)彈(dan)發射裝(zhuang)(zhuang)置。IPEM采用共燒(shao)瓷片多芯片模(mo)(mo)塊(kuai)(kuai)技術(shu)組(zu)裝(zhuang)(zhuang)PEBB，大(da)大(da)降低(di)電路接線電感(gan)，提高系統效率(lv)，現已開發成(cheng)(cheng)功(gong)第二(er)代IPEM，其(qi)中(zhong)(zhong)所有的(de)(de)(de)無源(yuan)元件(jian)以(yi)埋層(ceng)方式掩埋在襯底中(zhong)(zhong)。智能化(hua)、模(mo)(mo)塊(kuai)(kuai)化(hua)的(de)(de)(de)模(mo)(mo)塊(kuai)(kuai)也成(cheng)(cheng)為(wei)IGBT發展熱點。
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